200V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

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Fairchild

仙童半导体

功率 MOSFET，P 沟道，QFET®，-200 V，-2.8 A，2.7 Ω，TO-220

该 P 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •-2.8 A、-200 V、RDS(on)= 2.7 Ω（最大值），需 VGS = -10 V、ID = -1.4 A栅极电荷低（典型值：6nC)\n•低 Crss（典型值7.5pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

ONSEMI

安森美半导体

QFET P-CHANNEL

FEATURES • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 6.0nC (Typ.) • Extended Safe Operating Area • Lower RDS(ON): 2.06Ω (Typ.)

文件：529.83 Kbytes 页数：8 Pages

Fairchild

仙童半导体

200V P-Channel MOSFET

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：650.5 Kbytes 页数：8 Pages

Fairchild

仙童半导体

P-Channel QFET MOSFET -200 V, -0.67 A, 2.7

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：1.97742 Mbytes 页数：8 Pages

Fairchild

仙童半导体