200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

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FAIRCHILD

仙童半导体

功率 MOSFET，N 沟道，逻辑电平，QFET®，200 V，3.8 A，1.35 Ω，TO-220

这些 N 沟道增强型功率场效应晶体管采用飞兆专有的平面条形 DMOS 技术生产。 这一先进技术是专为最大限度地降低通态电阻，提供的卓越开关性能，以及在雪崩和交换模式下承受高能量脉冲而定制的。 这些器件非常适合高效开关 DC/DC 转换器、开关模式电源、电机控制。 •3.8 A、200 V、RDS(on) = 1.35 Ω（最大值）@ VGS = 10 V、ID = 1.9 A\n•低栅极电荷（典型值 4.0 nC)\n•低 Crss（典型值 6.0 pF)\n•100% 经过雪崩击穿测试;

ONSEMI

安森美半导体

TMOS POWER FET 4.0 AMPERES 200 VOLTS RDS(on) = 1.2 OHM

文件：268.86 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

N-CHANNEL 200V - 1.2ohm - 4A DPAK/IPAK MESH OVERLAY??MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li

文件：271.82 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 200V - 1.3 ohm - 4A TO-220 POWER MOS TRANSISTOR

N - CHANNEL 200V - 1.3 Ω - 4A TO-220 POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.3 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 150 oC OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPE

文件：82.95 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体