FQP30N06L

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=35mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FQP30N06L

功率 MOSFET，N 沟道，逻辑电平，QFET®，60 V，32 A，35 mΩ，TO-220; •32A, 60V, RDS(on)= 35mΩ（最大值）@VGS = 10 V, ID = 16A栅极电荷低（典型值：15nC)\n•低 Crss（典型值50pF)\n•100% 经过雪崩击穿测试\n•175°C最大结温额定值\"\n• 175°C maximum junction temperature rating\n;

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、音频放大器、直流电机控制和可变开关电源应用。

FQP30N06L

60V LOGIC N-Channel MOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FQP30N06L

N-Channel 60 V (D-S) MOSFET

FQP32N20C

Fairchild
TO-220