60V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：644.93 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

60V LOGIC N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：647.45 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=50A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.022Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：301.7 Kbytes 页数：2 Pages

ISC

无锡固电

60V N-Channel MOSFET

DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high

文件：126.35 Kbytes 页数：1 Pages

TGS

50A,60V Heatsink Planar N-Channel Power MOSFET

General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220M

文件：1.06537 Mbytes 页数：6 Pages

THINKISEMI

思祁半导体

50A,60V Heatsink Planar N-Channel Power MOSFET

文件：1.45884 Mbytes 页数：6 Pages

THINKISEMI

思祁半导体

功率 MOSFET，N 沟道，QFET®，60 V，50 A，22 mΩ，TO-220

此类 N 沟道 MOSFET 增强型电场效应晶体管是使用 Fairchild 的平面条纹 DMOS 专属技术生产的。此先进技术特别适用于最大程度降低导通电阻，提供卓越的开关性能，可承受雪崩和换相模式下的高能量脉冲。此类器件非常适用于汽车、DC/DC 转换器，以及便携式和电池运行产品中用于电源管理的高效开关等低压应用。 •50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V \n•Low gate charge ( typical 31 nC) \n•Low Crss ( typical 65 pF) \n•Fast switching \n•100% avalanche tested \n•Improved dv/dt capability \n•175°C maximum junction temperature rating;

ONSEMI

安森美半导体

60V LOGIC N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：647.45 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

50A,60V Heatsink Planar N-Channel Power MOSFET

文件：1.45884 Mbytes 页数：6 Pages

THINKISEMI

思祁半导体

功率 MOSFET，N 沟道，逻辑电平，QFET®，60 V，52.4 A，21 mΩ，TO-220

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •52.4A, 60V, RDS(on)= 21mΩ（最大值）@VGS = 10 V, ID = 26.2A栅极电荷低（典型值：24.5nC)\n•低 Crss（典型值90pF)\n•100% 经过雪崩击穿测试\n•175°C最大结温额定值\"\n• 175°C maximum junction temperature rating;

ONSEMI

安森美半导体