60V LOGIC N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

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FAIRCHILD

仙童半导体

功率 MOSFET，N 沟道，逻辑电平，QFET®，60 V，52.4 A，21 mΩ，TO-220

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •52.4A, 60V, RDS(on)= 21mΩ（最大值）@VGS = 10 V, ID = 26.2A栅极电荷低（典型值：24.5nC)\n•低 Crss（典型值90pF)\n•100% 经过雪崩击穿测试\n•175°C最大结温额定值\"\n• 175°C maximum junction temperature rating;

ONSEMI

安森美半导体

60V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 32.6A, 60V, RDS(on)= 0.021Ω@VGS= 10 V • Low gate charge ( typical 24.5 nC) • Low Crss ( typical 90 pF) •

文件：664.92 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

60V N-Channel MOSFET

DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high

文件：138.58 Kbytes 页数：1 Pages

TGS

60V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：630.28 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体