100V N-Channel MOSFET

Features VDS (V) = 100V ID = 10A (VGS = 10V) RDS(ON)

文件：854 Kbytes 页数：7 Pages

UMW

友台半导体

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 18.1 A RDS(ON)

文件：1.41186 Mbytes 页数：4 Pages

BYCHIP

百域芯

100V N-Channel MOSFET

Description This advancedMOSFET technology has been especially tailored to reduceon-state resistance, and to provide superior switchingperformance and high avalanche energy strength. Thesedevices are suitable for switched mode power supplies,audio amplifier, DC motor control, and variable sw

文件：675.84 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

D-PAK Tape and Reel Data

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

文件：412.2 Kbytes 页数：2 Pages

FAIRCHILD

仙童半导体

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 18.1 A RDS(ON)

文件：1.57783 Mbytes 页数：4 Pages

BYCHIP

百域芯

100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

文件：628.83 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体