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FQD1N60

600V N-Channel MOSFET

TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenerg

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQD1N60

600V N-Channel MOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQD1N60C

600V N-Channel MOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQD1N60C

N-Channel QFET짰 MOSFET 600 V, 1.0 A, 11.5 廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQD1N60C

N-Channel QFET짰 MOSFET 600 V, 1.0 A, 11.5 廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQD1N60C

600V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductorÿsproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

FQD1N60C

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=11.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

FQD1N60CTM

N-Channel QFET짰 MOSFET 600 V, 1.0 A, 11.5 廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQD1N60C

600V N-Channel MOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQD1N60C_09

600V N-Channel MOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FQD1N60TM

600V N-Channel MOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

1N60

GOLDBONDEDGERMANIUMDIODE

GermaniumGlassDiode Features •GermaniumGlassDiode •RoHSCompliance

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

1N60

SiliconAvalancheDiodes-1500WattMetalAxialLeadedTransientVoltageSuppressors

FEATURES •Hermeticallysealed •Breakdownvoltagerange6.8-200volts •Glasspassivatedjunction •Excellentclampingcapability •Lowzenerimpedance •100surgetested •-55°Cto+150°C •Bi-directional MAXIMUMRATING •PeakPulsePower(Ppk):15000Watts(10x1000µs)@25°C(seedi

LittelfuseLittelfuse Inc.

力特力特公司

Littelfuse

1N60

SchottkyBarrierDiode

Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

FORMOSA

1N60

JEDECDO-7PACKAGE

JEDECDO-7PACKAGE

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1

1N60

1.2Amps,600VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC1N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpow

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

1N60

GERMANIUMDIODES

Features ·Metalsiliconjunction,majoritycarrierconduction ·Highcurrentcapability,Lowforwardvoltagedrop ·ExtremelylowreversecurrentlR ·Ultraspeedswitchingcharacteristics ·Smalltemperaturecoefficientofforwardcharacteristics ·SatisfactoryWavedetectione

DAESAN

Daesan Electronics Corp.

DAESAN

1N60

SMALLSIGNALSCHOTTKYDIODE

VOLTAGERANGE:40V CURRENT:0.03A FEATURES Metalsilliconjunctionmajoritycarrierconduction Highcurrentcapability,lowforwardvoltagedrop ExtremelylowreversecurrentIR Ultraspeedswitchingcharacteristics Smalltemperaturecoefficientofforwardcharacteristics

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

1N60

600VN-ChannelMOSFET

Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •MoistureSensitivity:Level1perJ-STD-020C MaximumRatings •Storage&OperatingJunctionTemperature:-65℃to+125℃

TGS

Tiger Electronic Co.,Ltd

TGS

1N60

SchottkyBarrierRectifier

Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •MoistureSensitivity:Level1perJ-STD-020C MaximumRatings •Storage&OperatingJunctionTemperature:-65℃to+125℃

TGS

Tiger Electronic Co.,Ltd

TGS

详细参数

  • 型号:

    FQD1N60

  • 制造商:

    Fairchild Semiconductor Corporation

  • 功能描述:

    MOSFET N D-PAK

供应商型号品牌批号封装库存备注价格
华晶/FSC
2012+
TO252
999999
全新原装进口自己库存优势
询价
华晶/FSC
2015+
TO252
19898
专业代理原装现货,特价热卖!
询价
FAIRCHILD
08+(pbfree)
TO-252(DPAK)
8866
询价
仙童
05+
TO-252
8000
原装进口
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FSC
22+23+
TO-252
16687
绝对原装正品全新进口深圳现货
询价
FAIRC
23+
TO-252
90000
一级代理商进口原装现货、价格合理
询价
23+
N/A
85900
正品授权货源可靠
询价
VB
2019
NA
55000
绝对原装正品假一罚十!
询价
FAIRC
2020+
TO-252(DPAK)
16800
绝对原装进口现货,假一赔十,价格优势!?
询价
更多FQD1N60供应商 更新时间2024-4-27 9:30:00