首页 >FQD1N60>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

FQD1N60

600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energ

文件:543.8 Kbytes 页数:9 Pages

FAIRCHILD

仙童半导体

FQD1N60

600V N-Channel MOSFET

文件:549.28 Kbytes 页数:9 Pages

FAIRCHILD

仙童半导体

FQD1N60

600V N-Channel MOSFET

ONSEMI

安森美半导体

FQD1N60C

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=1A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 11.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:305.29 Kbytes 页数:2 Pages

ISC

无锡固电

FQD1N60C

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance

文件:824.93 Kbytes 页数:8 Pages

KERSEMI

FQD1N60C

N-Channel QFET짰 MOSFET 600 V, 1.0 A, 11.5 廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件:557.93 Kbytes 页数:9 Pages

FAIRCHILD

仙童半导体

FQD1N60C

N-Channel QFET짰 MOSFET 600 V, 1.0 A, 11.5 廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件:557.93 Kbytes 页数:9 Pages

FAIRCHILD

仙童半导体

FQD1N60C

N-Channel QFET® MOSFET 600 V, 1.0 A, 11.5 Ω

Features • 1 A, 600 V, RDS(on) = 11.5 Ω (Max.) @ VGS = 10 V, ID = 0.5 A • Low Gate Charge (Typ. 4.8 nC) • Low Crss (Typ. 3.5 pF) • 100% Avalanche Tested • RoHS Compliant Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar st

文件:611.33 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

FQD1N60C

600V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件:640.5 Kbytes 页数:9 Pages

FAIRCHILD

仙童半导体

FQD1N60CTM

丝印:FQD1N60C;Package:D-PAK;N-Channel QFET® MOSFET 600 V, 1.0 A, 11.5 Ω

Features • 1 A, 600 V, RDS(on) = 11.5 Ω (Max.) @ VGS = 10 V, ID = 0.5 A • Low Gate Charge (Typ. 4.8 nC) • Low Crss (Typ. 3.5 pF) • 100% Avalanche Tested • RoHS Compliant Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar st

文件:611.33 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

技术参数

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Channel Polarity:

    N-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    600

  • VGS Max (V):

    ±30

  • VGS(th) Max (V):

    4

  • ID Max (A):

    1

  • PD Max (W):

    28

  • RDS(on) Max @ VGS = 10 V(mΩ):

    11500

  • Qg Typ @ VGS = 10 V (nC):

    4.8

  • Ciss Typ (pF):

    130

  • Package Type:

    DPAK-3/TO-252-3

供应商型号品牌批号封装库存备注价格
华晶/FSC
2012+
TO252
999999
全新原装进口自己库存优势
询价
华晶/FSC
2015+
TO252
19898
专业代理原装现货,特价热卖!
询价
FAIRCHILD
24+
TO-252(DPAK)
8866
询价
仙童
05+
TO-252
8000
原装进口
询价
FSC
25+23+
TO-252
16687
绝对原装正品全新进口深圳现货
询价
FAIRC
25+
TO-252
90000
一级代理商进口原装现货、价格合理
询价
SANYO/三洋
23+
TO-220F
69820
终端可以免费供样,支持BOM配单!
询价
FAIRCHILD/仙童
2023+
TO-252
2360
十五年行业诚信经营,专注全新正品
询价
FAIRCHILD
2023+环保现货
TO-252(DPAK)
20000
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
FAIRCHILD
2023+
TO-252
5800
进口原装,现货热卖
询价
更多FQD1N60供应商 更新时间2026-6-2 8:01:00