80V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

文件：555.57 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

N-Channel QFET짰 MOSFET 80 V, 12.9 A, 100 m廓

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

文件：1.21485 Mbytes 页数：8 Pages

FAIRCHILD

仙童半导体

N-Channel QFET MOSFET 80 V, 12.9 A, 100 m

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

文件：1.21485 Mbytes 页数：8 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=12.9A@ TC=25℃ ·Drain Source Voltage -VDSS=80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：305.99 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel QFET MOSFET 80 V, 12.9 A, 100 m

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

文件：1.21485 Mbytes 页数：8 Pages

FAIRCHILD

仙童半导体

N-Channel QFET짰 MOSFET 80 V, 12.9 A, 100 m廓

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

文件：1.21485 Mbytes 页数：8 Pages

FAIRCHILD

仙童半导体

N 沟道 QFET® MOSFET 80V，12.9A，100mΩ

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •12.9A, 80V, RDS(on)= 100mΩ（最大值）@VGS = 10 V, ID = 6.45A栅极电荷低（典型值：8.8nC)\n•低 Crss（典型值29pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

ONSEMI

安森美半导体