60V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

文件：653.59 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

N-Channel QFET짰 MOSFET 60 V, 11 A, 115 m廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：916.61 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

N-Channel QFET짰 MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：916.61 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

60V N -Channel MOSFET

Features ID = 5.5 A Low Gate Charge (Typ. 4.8 nC) Low Crss (Typ. 17 pF) Low Level Gate Drive Requirements Allowing Direct Operation form Logic Drivers VDS=60V RDS(ON) (at VGS =10V)

文件：787.87 Kbytes 页数：6 Pages

UMW

友台半导体

丝印：FQD13N06L；Package：TO-252；60V N -Channel MOSFET

Features ID = 5.5 A Low Gate Charge (Typ. 4.8 nC) Low Crss (Typ. 17 pF) Low Level Gate Drive Requirements Allowing Direct Operation form Logic Drivers VDS=60V RDS(ON) (at VGS =10V)

文件：787.87 Kbytes 页数：6 Pages

UMW

友台半导体

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

文件：635.45 Kbytes 页数：5 Pages

BYCHIP

百域芯

N-Channel QFET짰 MOSFET 60 V, 11 A, 115 m廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：916.61 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

功率 MOSFET，N 沟道，逻辑电平，QFET®，60 V，11 A，115 mΩ，DPAK

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •11A, 60V, RDS(on)= 115mΩ（最大值）@VGS = 10 V, ID = 5.5A栅极电荷低（典型值：4.8nC)\n•低 Crss（典型值17pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

ONSEMI

安森美半导体