FQD13N06LTM规格书批发供应友台UMW-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业
FQD13N06LTM	文件：916.61 Kbytes Page：10 Pages	N-Channel QFET짰 MOSFET 60 V, 11 A, 115 m廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQD13N06LTM	文件：787.87 Kbytes Page：6 Pages	60V N -Channel MOSFET Features ID=5.5A LowGateCharge(Typ.4.8nC) LowCrss(Typ.17pF) LowLevelGateDriveRequirementsAllowing DirectOperationformLogicDrivers VDS=60V RDS(ON)(atVGS=10V)	UMWUMW 友台友台半导体
13N06L	文件：666.59 Kbytes Page：9 Pages	60VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQB13N06	文件：672.55 Kbytes Page：9 Pages	60VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQB13N06L	文件：666.59 Kbytes Page：9 Pages	60VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQD13N06	文件：659.99 Kbytes Page：10 Pages	60VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQD13N06	文件：803.8 Kbytes Page：8 Pages	N-ChannelQFETMOSFET60V,10A,140m	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQD13N06	文件：803.8 Kbytes Page：8 Pages	N-ChannelQFET짰MOSFET60V,10A,140m廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQD13N06	文件：305.53 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.14Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
FQD13N06L	文件：787.87 Kbytes Page：6 Pages	60VN-ChannelMOSFET Features ID=5.5A LowGateCharge(Typ.4.8nC) LowCrss(Typ.17pF) LowLevelGateDriveRequirementsAllowing DirectOperationformLogicDrivers VDS=60V RDS(ON)(atVGS=10V)	UMWUMW 友台友台半导体
FQD13N06L	文件：653.59 Kbytes Page：9 Pages	60VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQD13N06L	文件：916.61 Kbytes Page：10 Pages	N-ChannelQFET짰MOSFET60V,11A,115m廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQD13N06L	文件：916.61 Kbytes Page：10 Pages	N-ChannelQFET짰MOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQD13N06TF	文件：803.8 Kbytes Page：8 Pages	N-ChannelQFETMOSFET60V,10A,140m	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQD13N06TM	文件：803.8 Kbytes Page：8 Pages	N-ChannelQFET짰MOSFET60V,10A,140m廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQI13N06	文件：672.55 Kbytes Page：9 Pages	60VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQI13N06L	文件：666.59 Kbytes Page：9 Pages	60VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQP13N06	文件：664.65 Kbytes Page：8 Pages	60VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
FQP13N06	文件：302.06 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.135Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
FQP13N06L	文件：659.5 Kbytes Page：8 Pages	60VLOGICN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司

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详细参数

型号：
FQD13N06LTM
功能描述：
MOSFET 60V N-Channel QFET Logic Level
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	FQD13N06LTM	onsemi	23+	TO-252AA	30000	晶体管-分立半导体产品-原装正品	询价
深圳市明嘉莱科技有限公司	FQD13N06LTM	FAIRCHILD/仙童	24+	TO252	154308	明嘉莱只做原装正品现货	询价
深圳市讯顺达科技有限公司	FQD13N06LTM	ON	20+	DPAK	12100	全新原装公司现货	询价
深圳市赛特兴科技有限公司	FQD13N06LTM	ON	22+	DPAK	6000	正规渠道,只有原装!	询价
海芯未来半导体电子（深圳）有限公司	FQD13N06LTM	仙童	20+	NA	6800		询价
深圳市润其电子科技有限公司	FQD13N06LTM	FAIRCHILD	2022+	TO-252	8326	全新现货	询价
深圳市高捷芯城科技有限公司	FQD13N06LTM	onsemi(安森美)	23+	TO-252	9555	支持大陆交货,美金交易。原装现货库存。	询价
深圳市特顺芯科技有限公司	FQD13N06LTM	NEWINORIGINAL	2008++	TO-252	6500	新进库存/原装	询价
深圳市莱克讯科技有限公司	FQD13N06LTM	FAIRCHILD	2017+	TO-252	44558	深圳香港代理原装现货库存(美国-日本-台湾)可开正规增	询价
深圳市博浩通科技有限公司	FQD13N06LTM	FAIRCHILD	23+	SOT252	7750	全新原装优势	询价

更多FQD13N06LTM供应商更新时间2024-4-25 17:04:00

详细参数

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