丝印：FQD13N06L；Package：TO-252；60V N -Channel MOSFET

Features ID = 5.5 A Low Gate Charge (Typ. 4.8 nC) Low Crss (Typ. 17 pF) Low Level Gate Drive Requirements Allowing Direct Operation form Logic Drivers VDS=60V RDS(ON) (at VGS =10V)

文件：787.87 Kbytes 页数：6 Pages

UMW

友台半导体

丝印：FQD13N06L；Package：TO-252；60V N -Channel MOSFET

Features ID = 5.5 A Low Gate Charge (Typ. 4.8 nC) Low Crss (Typ. 17 pF) Low Level Gate Drive Requirements Allowing Direct Operation form Logic Drivers VDS=60V RDS(ON) (at VGS =10V)

文件：787.87 Kbytes 页数：6 Pages

UMW

友台半导体

60V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

文件：653.59 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel QFET짰 MOSFET 60 V, 11 A, 115 m廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：916.61 Kbytes 页数：10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel QFET짰 MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：916.61 Kbytes 页数：10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

60V N -Channel MOSFET

Features ID = 5.5 A Low Gate Charge (Typ. 4.8 nC) Low Crss (Typ. 17 pF) Low Level Gate Drive Requirements Allowing Direct Operation form Logic Drivers VDS=60V RDS(ON) (at VGS =10V)

文件：787.87 Kbytes 页数：6 Pages

UMW

友台半导体

N-Channel QFET짰 MOSFET 60 V, 11 A, 115 m廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：916.61 Kbytes 页数：10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

文件：635.45 Kbytes 页数：5 Pages

Bychip

百域芯