丝印：FQPF10N60C；Package：TO-220F；N-Channel QFET® MOSFET 600 V, 9.5 A, 730 mΩ

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand hi

文件：1.45737 Mbytes 页数：12 Pages

ONSEMI

安森美半导体

丝印：FQPF10N60C；Package：TO-220F；N-Channel QFET® MOSFET 600 V, 9.5 A, 730 mΩ

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand hi

文件：1.45737 Mbytes 页数：12 Pages

ONSEMI

安森美半导体

丝印：FQPF10N60CT；Package：TO-220F；N-Channel QFET® MOSFET 600 V, 9.5 A, 730 mΩ

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand hi

文件：1.45737 Mbytes 页数：12 Pages

ONSEMI

安森美半导体

丝印：FQPF10N60C；Package：TO-220F；N-Channel QFET® MOSFET 600 V, 9.5 A, 730 mΩ

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand hi

文件：1.45737 Mbytes 页数：12 Pages

ONSEMI

安森美半导体

丝印：FQPF10N60C；Package：TO-220F；N-Channel QFET® MOSFET 600 V, 9.5 A, 730 mΩ

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand hi

文件：1.45737 Mbytes 页数：12 Pages

ONSEMI

安森美半导体

丝印：FQPF10N60CT；Package：TO-220F；N-Channel QFET® MOSFET 600 V, 9.5 A, 730 mΩ

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand hi

文件：1.45737 Mbytes 页数：12 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=9.5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.73Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：278.79 Kbytes 页数：2 Pages

ISC

无锡固电

600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pul

文件：835.79 Kbytes 页数：10 Pages

Fairchild

仙童半导体

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc

文件：1.026619 Mbytes 页数：9 Pages

KERSEMI

600V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching perfor mance, and withstan

文件：940.45 Kbytes 页数：10 Pages

Fairchild

仙童半导体