丝印：FQT2P25；Package：SOT-223；P-Channel QFET® MOSFET -250 V, -0.55 A, 4.0 Ω

Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high

文件：995.76 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：FQT2P25；Package：SOT-223；P-Channel QFET® MOSFET -250 V, -0.55 A, 4.0 Ω

Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high

文件：995.76 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

P-Channel QFET® MOSFET -250 V, -0.55 A, 4.0 Ω

Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high

文件：995.76 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

250V P-Channel MOSFET

文件：654.35 Kbytes 页数：8 Pages

Fairchild

仙童半导体

P-Channel QFET MOSFET

文件：986.34 Kbytes 页数：8 Pages

Fairchild

仙童半导体

P-Channel QFET MOSFET

文件：986.34 Kbytes 页数：8 Pages

Fairchild

仙童半导体