丝印：FQP47P06；Package：TO-220；-60V P-Channel MOSFET

Features ID= - 47A VDS (V) = -60V RDS(on)= 26 m (V GS = -10V) Low Gate Charge (Typ. 84 nC) Low Crss (Typ. 320 pF) 100 Avalanche Tested 175°C Maximum Junction Temperature Rating

文件：521.22 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：FQP47P06；Package：TO-220；-60V P-Channel MOSFET

Features ID= - 47A VDS (V) = -60V RDS(on)= 26 m (V GS = -10V) Low Gate Charge (Typ. 84 nC) Low Crss (Typ. 320 pF) 100 Avalanche Tested 175°C Maximum Junction Temperature Rating

文件：521.22 Kbytes 页数：8 Pages

UMW

友台半导体

P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -47A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 26mΩ(Max)@VGS= -10V APPLICATIONS · Switched Mode Power Supplies · DC Motor Control · Variable Switching Power

文件：415.58 Kbytes 页数：2 Pages

ISC

无锡固电

60V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：714.01 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司