丝印：FQD2P40；Package：D-PAK；P-Channel QFET® MOSFET -400 V, -1.56 A, 6.5 Ω

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：872.69 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：FQD2P40；Package：D-PAK；P-Channel QFET® MOSFET -400 V, -1.56 A, 6.5 Ω

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：872.69 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

400V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a

文件：715.08 Kbytes 页数：9 Pages

Fairchild

仙童半导体

P-Channel QFET® MOSFET -400 V, -1.56 A, 6.5 Ω

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：872.69 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

P-Channel QFET MOSFET -400 V, -1.56 A, 6.5

文件：702.95 Kbytes 页数：8 Pages

Fairchild

仙童半导体

400V P-Channel MOSFET

文件：646.18 Kbytes 页数：9 Pages

Fairchild

仙童半导体

P-Channel QFET MOSFET -400 V, -1.56 A, 6.5

文件：702.95 Kbytes 页数：8 Pages

Fairchild

仙童半导体