FQD19N10L

100V LOGIC N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst

FQD19N10L

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=15.6A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FQD19N10L

功率 MOSFET，N 沟道，逻辑电平，QFET®，100 V，15.6 A，100 mΩ，DPAK; •15.6A, 100V, RDS(on)= 100mΩ（最大值）@VGS = 10 V, ID = 7.8A栅极电荷低（典型值：14nC)\n•低 Crss（典型值35pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested\n;

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。

FQD19N10L

N-Channel QFET MOSFET

FQD19N10L

N-Channel 100 V (D-S) MOSFET

FQD19N10LTF

N-channel Enhancement Mode Power MOSFET

Features VDS=100V,ID=18.1A RDS(ON)

FQD19N10LTM

N-Channel QFET짰 MOSFET 100 V, 15.6 A, 100 m廓

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst

FQD19N10LTM

丝印：FQD19N10；Package：TO-252；100V N -Channel MOSFET

Features LowGateCharge(Typ.14nC) LowCrss(Typ.35pF) VDS(V)=100V ID=15.6A(VGS=10V) RDS(ON)

FQD19N10LTM

N-channel Enhancement Mode Power MOSFET

Features VDS=100V,ID=18.1A RDS(ON)

FQD19N10L_13

N-Channel QFET MOSFET