100V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

文件：623.02 Kbytes 页数：9 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=15.6A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：293.97 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 100 V (D-S) MOSFET

文件：1.01047 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel QFET MOSFET

文件：530.84 Kbytes 页数：8 Pages

Fairchild

仙童半导体

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 18.1 A RDS(ON)

文件：1.60185 Mbytes 页数：4 Pages

Bychip

百域芯

N-Channel QFET짰 MOSFET 100 V, 15.6 A, 100 m廓

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

文件：1.34898 Mbytes 页数：8 Pages

Fairchild

仙童半导体

丝印：FQD19N10；Package：TO-252；100V N -Channel MOSFET

Features Low Gate Charge (Typ. 14 nC) Low Crss (Typ. 35 pF) VDS(V) = 100V ID =15.6A (VGS = 10V) RDS(ON)

文件：1.38344 Mbytes 页数：5 Pages

UMW

友台半导体

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 18.1 A RDS(ON)

文件：1.63316 Mbytes 页数：4 Pages

Bychip

百域芯

N-Channel QFET MOSFET

文件：530.84 Kbytes 页数：8 Pages

Fairchild

仙童半导体

功率 MOSFET，N 沟道，逻辑电平，QFET®，100 V，15.6 A，100 mΩ，DPAK

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •15.6A, 100V, RDS(on)= 100mΩ（最大值）@VGS = 10 V, ID = 7.8A栅极电荷低（典型值：14nC)\n•低 Crss（典型值35pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

ONSEMI

安森美半导体