N-Channel QFET MOSFET 200 V, 7.8 A, 360 mOhm

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 7.8 A,200 V, RDS(on) = 360 mΩ (Max.)@ VGS = 10 V, ID= 3.9 A • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ

文件：1.28335 Mbytes 页数：9 Pages

FAIRCHILD

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N-channel Enhancement Mode Power MOSFET

Features  VDS= 200 V, ID= 8 A RDS(ON)

文件：659.9 Kbytes 页数：5 Pages

BYCHIP

百域芯

200V LOGIC N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

文件：576.23 Kbytes 页数：9 Pages

FAIRCHILD

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N-Channel QFET MOSFET 200 V, 7.6 A, 360 m

文件：765.77 Kbytes 页数：8 Pages

FAIRCHILD

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N-Channel QFET짰 MOSFET 200 V, 7.6 A, 360 m廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

文件：765.77 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体