零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
FQB9N25C | 250V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
N-ChannelPowerMOSFET | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | NELLSEMI | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■250V,8.1A,RDS(ON)=450mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■250V,8.1A,RDS(ON)=450mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •9.4A,250V,RDS(on)=0.42Ω@VGS=10V •Lowgatecharge(typical15.5nC) •LowCrss(typical15pF) •Fastswitching | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
250VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=7.4A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.42Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelQFET짰MOSFET250V,7.4A,420廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
250VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •9.4A,250V,RDS(on)=0.42Ω@VGS=10V •Lowgatecharge(typical15.5nC) •LowCrss(typical15pF) •Fastswitching | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=9.4A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.42Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
250VN-ChannelMOSFET 250VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=6.7A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.42Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=8.8A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.43Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
250VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=7.4A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.42Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
详细参数
- 型号:
FQB9N25C
- 制造商:
FAIRCHILD
- 制造商全称:
Fairchild Semiconductor
- 功能描述:
250V N-Channel MOSFET
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD |
23+ |
TO-263 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
FAIRCHILD |
08+(pbfree) |
TO-263(D2PAK) |
8866 |
询价 | |||
FSC |
12+ |
TO-263 |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | ||
FAIRCHILD |
23+ |
TO-263 |
11000 |
全新原装 |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
FAIRCHIL |
23+ |
TO-263 |
90000 |
一级代理商进口原装现货、价格合理 |
询价 | ||
23+ |
N/A |
89950 |
正品授权货源可靠 |
询价 | |||
FAIRCHILD |
2023+ |
TO-263 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
FAIRC |
2020+ |
TO-263(D2PAK) |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
NXP/恩智浦 |
23+ |
TO-220 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 |
相关规格书
更多- FQB9N25CTM
- FQB9N30
- FQB9N50C
- FQB9N50CF
- FQB9N50CFTM_WS
- FQB9N50TM
- FQB9P25TM
- FQ-BAT1
- F-QB-F2
- F-QB-F4
- F-QB-F6
- FQC-00130
- FQD10N20C
- FQD10N20CTF
- FQD10N20CTM_F080
- FQD10N20L
- FQD10N20LTF
- FQD10N20TF
- FQD11P06
- FQD11P06TM
- FQD1216LME/I H-5
- FQD1216LME/P H-5
- FQD1216ME/I H-5
- FQD1236/F H-5
- FQD1236E/F H-5
- FQD12N20
- FQD12N20LTM
- FQD12N20TF
- FQD12N20TM_F080
- FQD12P10TF
- FQD12P10TM
- FQD12P10TM_F085
- FQD13N06_09
- FQD13N06LTF
- FQD13N06TF
- FQD13N10L
- FQD13N10LTM
- FQD13N10LTMNBEL001
- FQD13N10TM
- FQD16N15TF
- FQD16N25CTF
- FQD16N25CTM
- FQD16N25CTM_F080
- FQD17N08L
- FQD17N08LTM
相关库存
更多- FQB9N25TM
- FQB9N50
- FQB9N50C_09
- FQB9N50CFTM
- FQB9N50CTM
- FQB9P25
- FQBAT1
- F-QB-F1
- F-QB-F3
- F-QB-F5
- FQC-00129
- FQD10N20
- FQD10N20C_09
- FQD10N20CTM
- FQD10N20CTM-CUT TAPE
- FQD10N20L_13
- FQD10N20LTM
- FQD10N20TM
- FQD11P06TF
- FQD1200MK5
- FQD1216LME/I V-5
- FQD1216LME/P V-5
- FQD1216ME/I V-5
- FQD1236/F V-5
- FQD1236E/F V-5
- FQD12N20LTF
- FQD12N20LTM_F085
- FQD12N20TM
- FQD12P10
- FQD12P10TF_NB82105
- FQD12P10TM_AS004
- FQD13N06
- FQD13N06L
- FQD13N06LTM
- FQD13N06TM
- FQD13N10LTF
- FQD13N10LTM_NBEL001
- FQD13N10TF
- FQD14N15TM
- FQD16N15TM
- FQD16N25CTF_12
- FQD16N25CTM_12
- FQD17N08
- FQD17N08LTF
- FQD17N08TF