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FQB9N50C

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件:609.16 Kbytes 页数:9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB9N50C

N-Channel QFET짰 MOSFET 500 V, 9 A, 800 m廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件:487.21 Kbytes 页数:8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB9N50C

500V N-Channel MOSFET

文件:802.04 Kbytes 页数:9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB9N50CF

500V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件:747.58 Kbytes 页数:8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB9N50CFTM

500V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件:747.58 Kbytes 页数:8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB9N50CFTM_WS

500V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件:747.58 Kbytes 页数:8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB9N50CTM

N-Channel QFET짰 MOSFET 500 V, 9 A, 800 m廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件:487.21 Kbytes 页数:8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB9N50C_09

500V N-Channel MOSFET

文件:802.04 Kbytes 页数:9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB9N50C

功率 MOSFET,N 沟道,QFET®,500 V,9 A,800 mΩ,D2PAK

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻,并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正(PFC)及照明灯电子镇流器。 •9A, 500V, RDS(on)= 800mΩ(最大值)@VGS = 10 V, ID = 4.5A栅极电荷低(典型值:28nC)\n•低 Crss(典型值24pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

ONSEMI

安森美半导体

技术参数

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Channel Polarity:

    N-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    500

  • VGS Max (V):

    ±30

  • VGS(th) Max (V):

    4

  • ID Max (A):

    9

  • PD Max (W):

    135

  • RDS(on) Max @ VGS = 10 V(mΩ):

    800

  • Qg Typ @ VGS = 10 V (nC):

    28

  • Ciss Typ (pF):

    790

  • Package Type:

    D2PAK-3/TO-263-2

供应商型号品牌批号封装库存备注价格
ON/安森美
24+
TO-263
505348
免费送样原盒原包现货一手渠道联系
询价
仙童
06+
TO-263
3800
原装
询价
FAIRCHILD
24+
TO-263(D2PAK)
8866
询价
FAICHILD
12+
TO-263
15000
全新原装,绝对正品,公司现货供应。
询价
FAIRCHILD
24+
5000
只做原装公司现货
询价
FAIRCHIL
24+
TO-263
90000
一级代理商进口原装现货、价格合理
询价
FAIRCHILD
18+
TO-263
41200
原装正品,现货特价
询价
FAIRCHILD
20+
TO-263
38900
原装优势主营型号-可开原型号增税票
询价
FAIRCHILD
1709+
SOT-263
32500
普通
询价
FAIRCHILD/仙童
23+
TO-2632L(D2PAK)
50000
全新原装正品现货,支持订货
询价
更多FQB9N50C供应商 更新时间2025-10-5 17:06:00