| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
FQD10N20C | N-Channel QFET MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features •7.8A,200V,RDS(on)=360mΩ(Max.)@VGS=10V,ID=3.9A •LowGateCharge(Typ.20nC) •LowCrss(Typ | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
FQD10N20C | N-Channel QFET MOSFET 200 V, 7.8 A, 360 mOhm GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features •7.8A,200V,RDS(on)=360mΩ(Max.)@VGS=10V,ID=3.9A •LowGateCharge(Typ.20nC) •LowCrss(Typ | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
FQD10N20C | 200V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features •7.8A,200V,RDS(on)=360mΩ(Max.)@VGS=10V,ID=3.9A •LowGateCharge(Typ.20nC) •LowCrss(Typ | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
FQD10N20C | 200V N-Channel MOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
FQD10N20C | isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
N-Channel QFET MOSFET 200 V, 7.8 A, 360 mOhm GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features •7.8A,200V,RDS(on)=360mΩ(Max.)@VGS=10V,ID=3.9A •LowGateCharge(Typ.20nC) •LowCrss(Typ | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200V N-Channel MOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-Channel200V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
200VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology. ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
HIGHPOWER125WHIGHQUALITYAUDIOAMPLIFIERAPPLICATIONS [EXICON] NANDPCHANNELLAERALMOSFETS | ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 | ||
NCHANNELLATERALMOSFET | ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 | ||
UninterruptiblePowerSupply Description UniFETTMMOSFETisFairchildSemiconductor’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitablef | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=7.6A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
UninterruptiblePowerSupply Description UniFETTMMOSFETisFairchildSemiconductor’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitablef | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
HighVoltagePowerSupplies | TDKTDK Corporation 东电化（中国）投资有限公司 | TDK | ||
200VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VN-ChannelMOSFET
| FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=9.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
详细参数
- 型号：
FQD10N20C
- 制造商：
FAIRCHILD
- 制造商全称：
Fairchild Semiconductor
- 功能描述：
200V N-Channel MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
23+ |
TO-2523L(DPAK) |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
ONSEMI |
23/22+ |
NA |
2000 |
全线可订货.含税开票 |
询价 | ||
仙童 |
05+ |
TO-252 |
8000 |
原装进口 |
询价 | ||
FAIRCHILD |
08+(pbfree) |
TO-252(DPAK) |
8866 |
询价 | |||
FSC |
2017+ |
TO-252-2 |
25899 |
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增 |
询价 | ||
FAIRC |
1415+ |
TO-252(DPAK) |
28500 |
全新原装正品,优势热卖 |
询价 | ||
FAIRCHILD |
13+ |
TO252 |
27258 |
原装分销 |
询价 | ||
FSC |
2016+ |
TO252 |
2811 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
FSC |
2021+ |
TO-252 |
6034 |
百分百原装正品 |
询价 |
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