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FQB9N30

300V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQI9N30

300VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP9N30

300VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP9N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=9.0A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.45Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQPF9N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6.0A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.45Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQPF9N30

300VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFB9N30A

PowerMOSFET(Vdss=300V,Rds(on)=0.45ohm,Id=9.3A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower

IRF

International Rectifier

IRFB9N30A

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFB9N30APBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFB9N30APBF

HEXFET짰PowerMOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationofastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatlowerdi

IRF

International Rectifier

详细参数

  • 型号:

    FQB9N30

  • 制造商:

    FAIRCHILD

  • 制造商全称:

    Fairchild Semiconductor

  • 功能描述:

    300V N-Channel MOSFET

供应商型号品牌批号封装库存备注价格
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FAIRCHILD
1709+
SOT-263
32500
普通
询价
FAIRCHILD
2023+环保现货
TO263
10
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
FAIRCHILD/仙童
23+
1
6500
专注配单,只做原装进口现货
询价
FAIRCHILD/仙童
23+
1
6500
专注配单,只做原装进口现货
询价
FAIRCHILD/仙童
23+
D2-PAKTO-263
24190
原装正品代理渠道价格优势
询价
FAIRCHILD/仙童
21+
D2-PAKTO-263
30000
优势供应 实单必成 可13点增值税
询价
FAIRCHILD/仙童
22+
D2-PAKTO-263
18000
原装正品
询价
FAIRCHILD/仙童
25+
D2-PAKTO-263
54558
百分百原装现货 实单必成 欢迎询价
询价
FAIRCHILD/仙童
21+
D2-PAKTO-263
30000
优势供应 实单必成 可13点增值税
询价
更多FQB9N30供应商 更新时间2025-7-18 9:01:00