| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
FQD10N20 | 200V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features •7.8A,200V,RDS(on)=0.36Ω(Max.)@VGS=10V •LowGateCharge(Typ.13.5nC) •LowCrss(Typ.13pF) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
FQD10N20 | 200V LOGIC N-Channel MOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
FQD10N20 | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=7.6A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.36Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
200V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features •7.8A,200V,RDS(on)=360mΩ(Max.)@VGS=10V,ID=3.9A •LowGateCharge(Typ.20nC) •LowCrss(Typ | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-Channel QFET MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features •7.8A,200V,RDS(on)=360mΩ(Max.)@VGS=10V,ID=3.9A •LowGateCharge(Typ.20nC) •LowCrss(Typ | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-Channel QFET MOSFET 200 V, 7.8 A, 360 mOhm GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features •7.8A,200V,RDS(on)=360mΩ(Max.)@VGS=10V,ID=3.9A •LowGateCharge(Typ.20nC) •LowCrss(Typ | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-Channel QFET MOSFET 200 V, 7.8 A, 360 mOhm GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features •7.8A,200V,RDS(on)=360mΩ(Max.)@VGS=10V,ID=3.9A •LowGateCharge(Typ.20nC) •LowCrss(Typ | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200V LOGIC N-Channel MOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-Channel QFET짰 MOSFET 200 V, 7.6 A, 360 m廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-Channel QFET짰 MOSFET 200 V, 7.6 A, 360 m廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
200V N-Channel MOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200V N-Channel MOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-Channel QFET MOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-Channel 200 V (D-S) MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel QFET MOSFET 200 V, 7.6 A, 360 m | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-Channel QFET MOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-Channel QFET MOSFET 200 V, 7.6 A, 360 m | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-Channel 200 V (D-S) MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
200V N-Channel MOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
详细参数
- 型号：
FQD10N20
- 制造商：
FAIRCHILD
- 制造商全称：
Fairchild Semiconductor
- 功能描述：
200V N-Channel MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
19+ |
TO-252 |
33580 |
询价 | |||
FAIRCHILD |
23+ |
TO-252 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
仙童 |
06+ |
TO-252 |
8000 |
原装 |
询价 | ||
FAIRCHILD |
SOT-252 |
109000 |
询价 | ||||
FAIRCHILD |
2017+ |
TO-252-2 |
25899 |
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增 |
询价 | ||
原厂 |
23+ |
TO-252 |
5000 |
原装正品,假一罚十 |
询价 | ||
FSC |
23+ |
DIP-8 |
18000 |
询价 | |||
FAIRC |
12+ |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | |||
FAIRCHILD |
2022+ |
TO-252-2 |
5000 |
只做原装公司现货 |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 |
相关规格书
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相关库存
更多- FQD10N20LTM
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