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FQB9N50

500V N-Channel MOSFET

Features • 9.0A, 500V, RDS(on) = 0.73Ω @VGS = 10 V • Low gate charge ( typical 28 nC) • Low Crss ( typical 20 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

文件:718.07 Kbytes 页数:9 Pages

Fairchild

仙童半导体

FQB9N50

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=9A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.73Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:294.12 Kbytes 页数:2 Pages

ISC

无锡固电

FQB9N50

500V N-Channel MOSFET

文件:711.02 Kbytes 页数:9 Pages

Fairchild

仙童半导体

FQB9N50

500V N-Channel MOSFET

ONSEMI

安森美半导体

FQB9N50C

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件:609.16 Kbytes 页数:9 Pages

Fairchild

仙童半导体

FQB9N50C

N-Channel QFET짰 MOSFET 500 V, 9 A, 800 m廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件:487.21 Kbytes 页数:8 Pages

Fairchild

仙童半导体

FQB9N50CF

500V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件:747.58 Kbytes 页数:8 Pages

Fairchild

仙童半导体

FQB9N50CFTM

500V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件:747.58 Kbytes 页数:8 Pages

Fairchild

仙童半导体

FQB9N50CFTM_WS

500V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件:747.58 Kbytes 页数:8 Pages

Fairchild

仙童半导体

FQB9N50CTM

N-Channel QFET짰 MOSFET 500 V, 9 A, 800 m廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件:487.21 Kbytes 页数:8 Pages

Fairchild

仙童半导体

技术参数

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Channel Polarity:

    N-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    500

  • VGS Max (V):

    ±30

  • VGS(th) Max (V):

    4

  • ID Max (A):

    9

  • PD Max (W):

    135

  • RDS(on) Max @ VGS = 10 V(mΩ):

    800

  • Qg Typ @ VGS = 10 V (nC):

    28

  • Ciss Typ (pF):

    790

  • Package Type:

    D2PAK-3/TO-263-2

供应商型号品牌批号封装库存备注价格
仙童
06+
TO-263
3800
原装库存
询价
FAIRCHILD
24+
TO-263(D2PAK)
8866
询价
FAIRCHILD
24+
TO-263
5000
全现原装公司现货
询价
FAIRCHIL
24+
TO-263
90000
一级代理商进口原装现货、价格合理
询价
FAIRCHILD
1709+
SOT-263
32500
普通
询价
FAIRCHILD/仙童
23+
TO263
50000
全新原装正品现货,支持订货
询价
FAIRCHILD/仙童
2022+
TO-263
12888
原厂代理 终端免费提供样品
询价
FAIRCHILD/仙童
23+
SOT-263
45000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
FAIRCILD
22+
TO-263
8000
原装正品支持实单
询价
FAIRCHILD
01+
TO-263
100
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
更多FQB9N50供应商 更新时间2025-11-30 9:17:00