N-Channel Logic Level PWM Optimized Power MOSFET

General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequen

文件：229.7 Kbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=95A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：294.15 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Logic Level PWM Optimized Power MOSFET

ONSEMI

安森美半导体

30V LOGIC N-Channel MOSFET

文件：372.31 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

30V LOGIC N-Channel MOSFET

文件：1.78743 Mbytes 页数：6 Pages

KERSEMI

N-channel TrenchMOS transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Features ■ Low on-state resistance ■ Fast switching. Applications ■ High frequency computer motherboard DC to DC converters

文件：304.68 Kbytes 页数：15 Pages

PHI

飞利浦