isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 5A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 52mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

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ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 150V, ID= 50 A RDS(ON)

文件：671.71 Kbytes 页数：4 Pages

BYCHIP

百域芯

N-Channel PowerTrench짰 MOSFET 150 V, 27 A, 52 m

文件：178.9 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

N 沟道屏蔽门极 PowerTrench® MOSFET 150 V，27 A，52 mΩ

此N沟道MOSFET采用飞兆半导体先进的Power Trench®工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。 • Shielded Gate MOSFET Technology\n•VGS = 10 V，ID = 5 A时，最大rDS(on) = 52 mΩ \n•VGS = 6 V，ID = 5 A时，最大rDS(on) = 72 mΩ \n•100%经过UIL测试\n•符合RoHS标准;

ONSEMI

安森美半导体