isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=94A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =5.7mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：353.92 Kbytes 页数：2 Pages

ISC

无锡固电

30V N-Channel MOSFET

Features VDS (V) = 30V ID = 35A (VGS = 10V) RDS(ON) =5.7mW (VGS = 10V) RDS(ON) =6.8mW (VGS = 4.5V)

文件：651.96 Kbytes 页数：7 Pages

UMW

友台半导体

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

文件：977.91 Kbytes 页数：4 Pages

Bychip

百域芯

30V N-Channel MOSFET

Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/ DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Features VDS (V) =

文件：345.25 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

N-Channel 30-V (D-S) MOSFET

文件：1.01141 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel PowerTrench MOSFET

文件：130.1 Kbytes 页数：11 Pages

Fairchild

仙童半导体

N-Channel PowerTrench짰 MOSFET

文件：622.66 Kbytes 页数：11 Pages

Fairchild

仙童半导体

丝印：FDD8896；Package：TO-252AA；N-Channel PowerTrench® MOSFET 30V, 94A, 5.7mΩ

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Features • rD

文件：553.93 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

N 沟道，PowerTrench® MOSFET， 30V，94A，4.7mΩ

此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。 已针对低栅极电荷、低rDS(ON) 和高速开关进行了优化。 •RDS(ON) = 5.7 mΩ, VGS = 10V, ID = 35V\n•RDS(ON) = 6.8 mΩ, VGS = 4.5V, ID = 35V\n•高性能沟道技术可实现极低的RDS(ON)\n•低栅极电荷\n•高功率和高电流处理能力;

ONSEMI

安森美半导体

丝印：8896；Package：TO-252-3L；N-Channel Enhancement Mode Power MOSFET

Features | + 30V,90A Rosin 3.88m0@Vas = 10V (Typ) + Advanced Trench Technology « Provide Excellent Rosow and Low Gate Charge + Lead free product is acquired |

文件：2.88654 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子