丝印：FDD8447L；Package：TO-252-3L；40V N-Channel MOSFET

Features * Vds=60V,ID=53A * Rosion= 12ma@Ves=10v * Rosion = 17m0@Ves=4.5V

文件：2.46085 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：FDD8447L；Package：D-PAK；N-Channel PowerTrench짰 MOSFET

文件：531 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=50A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =8.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：330.79 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 40V, ID= 80A RDS(ON)

文件：2.12333 Mbytes 页数：4 Pages

Bychip

百域芯

Fast Switching

General Description This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application. Features ■ Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 14A

文件：519.46 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel PowerTrench짰 MOSFET 40V, 50A, 11.0m廓

Features ■ Typ rDS(on) = 7.0mΩ at VGS = 10V, ID = 14A ■ Typ rDS(on) = 8.5mΩ at VGS = 4.5V, ID = 11A ■ Fast Switching ■ Qualified to AEC Q101 ■ RoHS Compliant Applications ■ Inverter ■ Power Supplies ■ Automotive Engine Control ■ Power Train Management ■ Solenoid and Motor Drivers ■ Ele

文件：440.05 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

40V N-Channel PowerTrench짰 MOSFET 40V, 50A, 8.5m廓

文件：518.96 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N 沟道，PowerTrench® MOSFET，40V，50A，11.0mΩ

N-Channel PowerTrench® MOSFET 40V, 50A, 11.0mΩ •典型 rDS(on) = 7.0mΩ （VGS = 10 V、ID = 14 A）\n•典型rDS(on) = 8.5mΩ （VGS = 4.5V, ID = 11A）\n•快速开关\n•符合AEC Q101\n•符合 RoHS 标准;

ONSEMI

安森美半导体