500V N-Channel MOSFET

Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable f

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Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=6A@ TC=25℃ ·Drain Source Voltage : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.9Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

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ISC

无锡固电

N-Channel UniFETTM MOSFET500 V, 6 A, 900 m廓

文件：463.96 Kbytes 页数：9 Pages

Fairchild

仙童半导体

500V N-Channel MOSFET

文件：946.73 Kbytes 页数：8 Pages

Fairchild

仙童半导体

Improved dv/dt capability

文件：946.73 Kbytes 页数：8 Pages

Fairchild

仙童半导体

N-Channel UniFETTM MOSFET500 V, 6 A, 900 m廓

文件：463.96 Kbytes 页数：9 Pages

Fairchild

仙童半导体

N-Channel UniFETTM MOSFET500 V, 6 A, 900 m廓

文件：463.96 Kbytes 页数：9 Pages

Fairchild

仙童半导体

500V N-Channel MOSFET

ONSEMI

安森美半导体

N 沟道，MOSFET，500V，6A，0.9Ω

这些 N 沟道增强型功率场效应晶体管采用飞兆专有的平面条形 DMOS 技术生产。 这一先进技术是专为最大限度地降低导通电阻，提供卓越的开关性能，以及在雪崩击穿和换相情况下承受高能量脉冲而开发的。 这些器件非常适合高效开关模式电源和有源功率因数校正。 • 6A, 500V\n• RDS(on) = 0.9Ω @ VGS = 10 V\n• Low gate charge (typical 12.8 nC)\n• Low Crss (typical 9 pF)\n• Fast switching\n• 100% avalanche tested\n• Improved dv/dt capability\n• Qualified to AEC Q101\n• RoHS Compliant;

ONSEMI

安森美半导体