FDD6N50TM-WS技术资料参数库存现货-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
FDD6N50TM-WS	文件：463.96 Kbytes Page：9 Pages	N-Channel UniFETTM MOSFET500 V, 6 A, 900 m廓文件：463.96 Kbytes 页数：9 Pages	Fairchild 仙童半导体	Fairchild
FDU6N50	文件：845.65 Kbytes Page：9 Pages	500V N-Channel MOSFET Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable f 文件：845.65 Kbytes 页数：9 Pages	Fairchild 仙童半导体	Fairchild
FDU6N50	文件：463.96 Kbytes Page：9 Pages	N-Channel UniFETTM MOSFET500 V, 6 A, 900 m廓文件：463.96 Kbytes 页数：9 Pages	Fairchild 仙童半导体	Fairchild
FDU6N50F	文件：354.03 Kbytes Page：9 Pages	N-Channel MOSFET 500V, 5.5A, 1.15廓 Description These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high 文件：354.03 Kbytes 页数：9 Pages	Fairchild 仙童半导体	Fairchild

更多FDD6N50TM-WS供应商更新时间2025-10-13 18:19:00