N-Channel MOSFET 500V, 5.5A, 1.15廓

Description These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high

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N-Channel MOSFET 500V, 5.5A, 1.15廓

Description These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high

文件：354.03 Kbytes 页数：9 Pages

FAIRCHILD

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500V N-Channel MOSFET

Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable f

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N-Channel UniFETTM MOSFET500 V, 6 A, 900 m廓

文件：463.96 Kbytes 页数：9 Pages

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500V N-Channel MOSFET

Features • 5.5A, 500V, RDS(on) = 1.3Ω @VGS = 10 V • Low gate charge ( typical 17 nC) • Low Crss ( typical 11 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

文件：762.07 Kbytes 页数：9 Pages

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