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FQB6N50

500V N-Channel MOSFET

Features •5.5A,500V,RDS(on)=1.3Ω@VGS=10V •Lowgatecharge(typical17nC) •LowCrss(typical11pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQB6N50TM

600V N-Channel MOSFET

Features •5.5A,500V,RDS(on)=1.3Ω@VGS=10V •Lowgatecharge(typical17nC) •LowCrss(typical11pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

6N50

FastSwitchingSpeed

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

6N50

6Amps,500VoltsN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

6N50

6A,500VN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

AOD6N50

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOD6N50

500V,5.3AN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

FDD6N50

N-ChannelUniFETTMMOSFET500V,6A,900m廓

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6N50

500VN-ChannelMOSFET

Description UniFETTMMOSFETisFairchildSemiconductor’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitablef

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6N50F

N-ChannelMOSFET500V,5.5A,1.15廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFailchild’sproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6N50F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=5.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDD6N50FTF

N-ChannelMOSFET500V,5.5A,1.15廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFailchild’sproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6N50FTM

N-ChannelMOSFET500V,5.5A,1.15廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFailchild’sproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6N50FTM

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6N50TF

500VN-ChannelMOSFET

Description UniFETTMMOSFETisFairchildSemiconductor’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitablef

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6N50TM

500VN-ChannelMOSFET

Description UniFETTMMOSFETisFairchildSemiconductor’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitablef

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6N50TM

N-ChannelUniFETTMMOSFET500V,6A,900m廓

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6N50TM

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDD6N50TM-WS

N-ChannelUniFETTMMOSFET500V,6A,900m廓

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDU6N50

500VN-ChannelMOSFET

Description UniFETTMMOSFETisFairchildSemiconductor’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitablef

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    FQB6N50

  • 制造商:

    FAIRCHILD

  • 制造商全称:

    Fairchild Semiconductor

  • 功能描述:

    500V N-Channel MOSFET

供应商型号品牌批号封装库存备注价格
FAIRCHILD
19+
TO263
17585
询价
FAIRCHILD
23+
TO-263(D2
12300
全新原装真实库存含13点增值税票!
询价
仙童
05+
TO-263
3800
原装进口
询价
FAIRCHILD
08+(pbfree)
TO-263(D2PAK)
8866
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FAIRCHIL
23+
TO-263
90000
一级代理商进口原装现货、价格合理
询价
23+
N/A
36200
正品授权货源可靠
询价
VB
2019
NA
55000
绝对原装正品假一罚十!
询价
FAIRCHILD
20+
TO-263(D2PAK)
36900
原装优势主营型号-可开原型号增税票
询价
ON/安森美
23+
TO-220
69820
终端可以免费供样,支持BOM配单!
询价
更多FQB6N50供应商 更新时间2024-4-29 13:30:00