500V N-Channel MOSFET

Features • 5.5A, 500V, RDS(on) = 1.3Ω @VGS = 10 V • Low gate charge ( typical 17 nC) • Low Crss ( typical 11 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

文件：762.07 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

500V N-Channel MOSFET

ONSEMI

安森美半导体

600V N-Channel MOSFET

Features • 5.5A, 500V, RDS(on) = 1.3Ω @VGS = 10 V • Low gate charge ( typical 17 nC) • Low Crss ( typical 11 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

文件：885.29 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, DMOS technology

文件：687.06 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4.5A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：305.08 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel QFET MOSFET 500 V, 4.5 A, 1.2

文件：547.29 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体