丝印：FDD7N25LZ；Package：DPAK；N-Channel UniFETTM MOSFET 250 V, 6.2 A, 550 mΩ

Features • RDS(on) = 430 mΩ (Typ.) @ VGS = 10 V, ID = 3.1 A • Low Gate Charge (Typ. 12 nC) • Low Crss (Typ. 8 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • LCD/LED/PDP TV • Consumer Appliances • Lighting • Uninte

文件：757.97 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

N-Channel UniFET MOSFET

文件：329.12 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel MOSFET 250V, 6.2A, 0.55(ohm)

文件：925.67 Kbytes 页数：6 Pages

MGCHIP

N-Channel MOSFET 250V, 6.2A, 0.55(ohm)

文件：925.67 Kbytes 页数：6 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 6.2A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：351.93 Kbytes 页数：2 Pages

ISC

无锡固电