100V N-Channel MOSFET

Features Shielded Gate MOSFET Technology HBM ESD protection level > 6 kV typical (Note 4) High performance trench technology for extremely low RDS(on) High power and current handling capability in a widely used surface mount package VDS =100V ID(at VGS=10V)4.2A RDS(ON) (at VGS=10V)

文件：454.31 Kbytes 页数：6 Pages

UMW

友台半导体

丝印：FDD86113；Package：TO-252；100V N-Channel MOSFET

Features Shielded Gate MOSFET Technology HBM ESD protection level > 6 kV typical (Note 4) High performance trench technology for extremely low RDS(on) High power and current handling capability in a widely used surface mount package VDS =100V ID(at VGS=10V)4.2A RDS(ON) (at VGS=10V)

文件：454.31 Kbytes 页数：6 Pages

UMW

友台半导体

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 18.1 A RDS(ON)

文件：1.74335 Mbytes 页数：4 Pages

BYCHIP

百域芯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=5.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 104mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：354.39 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Shielded Gate PowerTrench짰 MOSFET 100 V, 5.5 A, 104 m廓

文件：244.91 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

N 沟道，屏蔽门极，PowerTrench® MOSFET，100V，5.5 A，104 mΩ

这一N沟道逻辑电平MOSFET器件采用飞兆半导体先进的PowerTrench®工艺生产，这一先进工艺是专为最大限度地降低导通阻抗并保持卓越开关性能而定制的。 旨在为增强ESD电压电平而增加了G-S齐纳管。 • Shielded Gate MOSFET Technology\n• Max rDS(on) = 104 mΩ at VGS = 10 V, ID = 4.2 A\n• Max rDS(on) = 156 mΩ at VGS = 4.5 V, ID = 3.4 A\n• HBM SD Protection Level > 6 kV typical (Note 4)\n• High Performance Trench Technology for Extremely Low rDS(on)\n• High Power and Current Handling Capability in a;

ONSEMI

安森美半导体