丝印：FDD6680AS；Package：TO-252；30V N -Channel MOSFET

Features • Includes SyncFET Schottky body diode • Low gate charge (21nC typical) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • VDS(V) = 30V • ID =50A (VGS = 10V) • RDS(ON)

文件：498.11 Kbytes 页数：7 Pages

UMW

友台半导体

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

文件：1.0433 Mbytes 页数：4 Pages

Bychip

百域芯

30V N-Channel PowerTrench SyncFET

General Description The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode

文件：123.02 Kbytes 页数：8 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=55A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =10.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：330.94 Kbytes 页数：2 Pages

ISC

无锡固电

30V N-Channel PowerTrench짰 SyncFET?

文件：332.08 Kbytes 页数：8 Pages

Fairchild

仙童半导体

30V N-Channel PowerTrench SyncFET

General Description The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode

文件：123.02 Kbytes 页数：8 Pages

Fairchild

仙童半导体

30V N-Channel PowerTrench짰 SyncFET?

文件：332.08 Kbytes 页数：8 Pages

Fairchild

仙童半导体

N 沟道，PowerTrench® SyncFET™ MOSFET，30V，55A，10.5mΩ

FDD6680AS设计用于替代同步DC/DC电源中的单一MOSFET和肖特基二极管。 此30V MOSFET设计用于最大限度地提高功率转换效率，提供低RDS(ON)和低栅极电荷。 FDD6680AS包含使用飞兆半导体单片SyncFET技术的集成肖特基二极管。 FDD6680AS在同步整流器中作为低端开关的性能与FDD6680A并联一个肖特基二极管的性能相似。 •55A，30V\n•RDS(ON) = 10.5 mΩ @ VGS = 10 V\n•RDS(ON) = 13.0 mΩ @ VGS = 4.5 V\n•包含SyncFET肖特基体二极管\n•低栅极电荷（典型值21 nC）。\n•高性能沟道技术可实现极低的RDS(ON)\n•高功率和高电流处理能力;

ONSEMI

安森美半导体