丝印：FDD6637；Package：TO-252；-30V P-Channel MOSFET

Features RDS(ON) =11.6mW(VGS =-10 V) RDS(ON) =18mW(VGS =-4.5 V) High performance trench technology for extremely low RDS(ON) RoHS Compliant VDSS = -30V

文件：417.43 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：FDD6637；Package：TO-252；-30V P-Channel MOSFET

Applications · Inverter · Power Supplies Features · RDS(ON) =11.6mW(VGS =-10 V) · RDS(ON) =18mW(VGS =-4.5 V) · High performance trench technology for extremely low RDS(ON) · RoHS Compliant · VDSS = -30V

文件：343.94 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

P-channel Enhancement Mode Power MOSFET

Features  VDS= -30V, ID= -60A RDS(ON)

文件：973.75 Kbytes 页数：5 Pages

BYCHIP

百域芯

35V P-Channel PowerTrench-R MOSFET

General Description This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss capability to offer superior performance benefit in the applications. Features · –55 A, –35 V RDS(ON) = 11.6 mW @ VGS =

文件：111.67 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

35V P-Channel PowerTrench MOSFET

文件：119.87 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

P-Channel 30 V (D-S) MOSFET

文件：999.21 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

丝印：FDD6637；Package：TO-252；P-Channel PowerTrench짰 MOSFET

文件：455.06 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

P 沟道，PowerTrench® MOSFET，35V，-55A，11.6mΩ

此P沟道MOSFET使用飞兆半导体专有PowerTrench技术生产，具有低Rdson和优化的Bvdss能力，在各种应用中都具有优异的性能。 •-55 A，-35 V\n•RDS(ON) = 11.6 mΩ @ VGS = -10 V\n•RDS(ON) = 18 mΩ @ VGS = -4.5 V\n•高性能沟道技术可实现极低的RDSON\n•符合RoHS标准;

ONSEMI

安森美半导体

35V P-Channel PowerTrench MOSFET

文件：119.87 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

P-Channel PowerTrench짰 MOSFET -35V, -21A, 18m廓

文件：334.6 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体