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FDD6630A

N-Channel PowerTrench??MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features · 21 A, 3

文件:147.57 Kbytes 页数:5 Pages

FAIRCHILD

仙童半导体

FDD6630A

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

文件:1.04329 Mbytes 页数:4 Pages

BYCHIP

百域芯

FDD6630A

isc N-Channel MOSFET Transistor

文件:347.3 Kbytes 页数:2 Pages

ISC

无锡固电

FDD6630A_11

30V N-Channel PowerTrench횘 MOSFET

文件:115.02 Kbytes 页数:5 Pages

FAIRCHILD

仙童半导体

FDD6630A

N 沟道,PowerTrench® MOSFET,30V,21A,35mΩ

此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。 已针对低栅极电荷、低rDS(ON) 和高速开关进行了优化。 •21 A, 30 V。\n•RDS(ON) = 35 mΩ @ VGS = 10 V\n•RDS(ON) = 50 mΩ @ VGS = 4.5 V\n•低栅极电荷(5nC典型值)\n•快速开关速度\n•高性能沟道技术可实现极低的RDS(ON);

ONSEMI

安森美半导体

技术参数

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Channel Polarity:

    N-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    30

  • VGS Max (V):

    20

  • VGS(th) Max (V):

    3

  • ID Max (A):

    21

  • PD Max (W):

    28

  • RDS(on) Max @ VGS = 4.5 V(mΩ):

    50

  • RDS(on) Max @ VGS = 10 V(mΩ):

    35

  • Qg Typ @ VGS = 4.5 V (nC):

    25

  • Qg Typ @ VGS = 10 V (nC):

    5

  • Ciss Typ (pF):

    462

  • Package Type:

    DPAK-3/TO-252-3

供应商型号品牌批号封装库存备注价格
FSC
15+
原厂原装
27500
进口原装现货假一赔十
询价
FAIRCHILD/仙童
2021+
TO-252
9000
原装现货,随时欢迎询价
询价
DISCRETE
2500
FSC
27500
询价
FAIRCHILD
24+
TO-252
36800
询价
仙童
06+
TO-252
12000
原装库存
询价
ONSemiconductor
24+
NA
3000
进口原装正品优势供应
询价
FAIRCHIL
26+
TO-252
90000
一级代理商进口原装现货、价格合理
询价
FAIRCHILD
TO-252
6688
15
现货库存
询价
三年内
1983
只做原装正品
询价
FAIRCHILD/仙童
18+
TO-252
41200
原装正品,现货特价
询价
更多FDD6630A供应商 更新时间2026-9-28 14:06:00