Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 11A, RDS(ON) = 12mΩ @VGS = 4.5V. RDS(ON) = 18mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：107.11 Kbytes 页数：4 Pages

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

CET

华瑞

DUAL J-FET INPUT OPERATIONAL AMPLIFIER????

文件：226.33 Kbytes 页数：5 Pages

NJRC

日本无线

DUAL J-FET INPUT OPERATIONAL AMPLIFIER????

文件：226.33 Kbytes 页数：5 Pages

NJRC

日本无线

DUAL J-FET INPUT OPERATIONAL AMPLIFIER????

文件：226.33 Kbytes 页数：5 Pages

NJRC

日本无线