Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 11A, RDS(ON) = 12mΩ @VGS = 4.5V. RDS(ON) = 18mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：107.11 Kbytes 页数：4 Pages

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 20 Volts CURRENT 11 Ampere FEATURE * Small flat package. (SO-8 ) * Super High density cell design for extremely low RDS(ON). * High saturation current capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：260.519 Kbytes 页数：2 Pages

CHENMKO

力勤

TRANSHIELLD CP2000 SERIES

文件：272.03 Kbytes 页数：3 Pages

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TRANSHIELLD CP2000 SERIES

文件：272.03 Kbytes 页数：3 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商