Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 20V, 6.5A, RDS(ON) = 30mΩ @VGS = 4.5V. RDS(ON) = 43mΩ @VGS = 2.5V. ■ -20V, -4.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 90mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capabi

文件：462.97 Kbytes 页数：7 Pages

CET

华瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 20V, 6.5A, RDS(ON) = 30mW @VGS = 4.5V. RDS(ON) = 43mW @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. -20V, -4.8A, RDS(ON) = 55mW @VGS = -4.5V. RDS(ON) = 90mW @VGS = -2.5V. Lead-free plating ; R

文件：923.95 Kbytes 页数：7 Pages

CET-MOS

华瑞

N+P Power MOSFET

CET

华瑞

Hi-Current, 15.00 Centers

文件：1.017 Mbytes 页数：1 Pages

EATON

伊顿