Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 40V, 6.3A, RDS(ON) = 30mΩ @VGS = 10V. RDS(ON) = 45mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

文件：109.6 Kbytes 页数：4 Pages

CET

华瑞

Dual N-Channel 60 V (D-S) 175 째C MOSFET

FEATURES • TrenchFET® power MOSFET • 100 Rg and UIS tested

文件：1.09119 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 6.3A, RDS(ON) = 30mW @VGS = 10V. RDS(ON) = 45mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：143.83 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel MOSFET uses advanced trench technology

文件：1.31757 Mbytes 页数：4 Pages

DOINGTER

杜因特

N Channel MOSFET

CET

华瑞