Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 7.6A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：104.63 Kbytes 页数：4 Pages

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 7.6A, RDS(ON) = 22mW @VGS = 10V. RDS(ON) = 33mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：534.99 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel MOSFET uses advanced trench technology

文件：1.88552 Mbytes 页数：6 Pages

DOINGTER

杜因特

N Channel MOSFET

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

文件：383.87 Kbytes 页数：4 Pages

CET

华瑞