P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -7.0A, RDS(ON) = 32mΩ @VGS = -10V. RDS(ON) = 50mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：424.59 Kbytes 页数：4 Pages

CET

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -7.0A, RDS(ON) = 32mW @VGS = -10V. RDS(ON) = 50mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：618.99 Kbytes 页数：4 Pages

CET-MOS

华瑞

P-Channel MOSFET uses advanced trench technology

文件：1.24862 Mbytes 页数：5 Pages

DOINGTER

杜因特

P Channel MOSFET

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P-Channel Enhancement Mode Field Effect Transistor

文件：446.23 Kbytes 页数：4 Pages

CET

华瑞