P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -6A, RDS(ON) = 44mΩ @VGS = -4.5V. RDS(ON) = 65mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：410.99 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -6A, RDS(ON) = 44mW @VGS = -4.5V. RDS(ON) = 65mW @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：617.27 Kbytes 页数：4 Pages

CET-MOS

华瑞

P Channel MOSFET

CET

华瑞

2.4 GHz DOWNCONVERTER GaAs MONOLITHIC INTEGRATED CIRCUIT

The MRFIC2401 is a GaAs low–noise amplifier and downmixer in a low–cost 16 lead plastic package designed for use in the 2.4 to 2.5 GHz Industrial– Scientific–Medical (ISM) band. The design is optimized for efficiency at 5.0 Volt operation at 2.45 GHz but is usable from 2.0 to 3.0 GHz in applicatio

文件：138.94 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

Silicon PNP Transistor RF Stages in FM Front Ends

Description: The NTE2401 is a silicon PNP transistor in a plastic SOT–23 type surface mount package designed for use in RF stages in FM front–ends in common base configuration for SMD applications.

文件：22.14 Kbytes 页数：2 Pages

NTE

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planer transistor For general amplification ■ Features ● Two elements incorporated into one package. (Base-coupled transistors) ● Reduction of the mounting area and assembly cost by one half.

文件：42.5 Kbytes 页数：3 Pages

PANASONIC

松下