P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -6A, RDS(ON) = 44mΩ @VGS = -4.5V. RDS(ON) = 65mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：410.99 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -6A, RDS(ON) = 44mW @VGS = -4.5V. RDS(ON) = 65mW @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：617.27 Kbytes 页数：4 Pages

CET-MOS

华瑞

P Channel MOSFET

CET

华瑞

WIRE WOUND COMMON MODE FILTERS

文件：152.39 Kbytes 页数：1 Pages

FRONTIER

P-Channel Enhancement Mode Field Effect Transistor

文件：215.26 Kbytes 页数：2 Pages

CHENMKO

力勤

128/64 SEGMENT LCD DRIVER

CP2400/1/2/3 devices are fixed function LCD drivers that can also be used for expanding GPIO, timekeeping, and increasing available system RAM by up to 256 bytes. The device is controlled using direct and indirect internal registers accessible through the 4-wire SPI or 2-wire SMBus interface. All

文件：768.48 Kbytes 页数：110 Pages

SILABS

芯科科技