Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 9A, RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：383.62 Kbytes 页数：4 Pages

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 9 Ampere FEATURE * Small flat package. (SO-8 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：289.17 Kbytes 页数：3 Pages

CHENMKO

力勤

Dual 105mW Headphone Amplifier

文件：148.93 Kbytes 页数：4 Pages

CeramateCeramate Technical

台基防雷台基防雷科技股份有限公司

Dual 105mW Headphone Amplifier

文件：148.93 Kbytes 页数：4 Pages

CeramateCeramate Technical

台基防雷台基防雷科技股份有限公司