P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -4.3A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：345.33 Kbytes 页数：4 Pages

CET

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P-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • 100 Rg and UIS tested

文件：1.035069 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P Channel MOSFET

CET

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -4A, RDS(ON) = 86mW @VGS = -10V. RDS(ON) = 125mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：420.2 Kbytes 页数：5 Pages

CET-MOS

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P-Channel Enhancement Mode MOSFET

‘GENERAL FEATURES * Vos=-60V b =-4A * Roson

文件：1.9001 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

P-Channel Enhancement Mode Field Effect Transistor

文件：430.42 Kbytes 页数：4 Pages

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P Channel MOSFET

CET

华瑞