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CEM6601A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V,-4A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEM6601-TP

P-ChannelEnhancementModeMOSFET

‘GENERALFEATURES *Vos=-60Vb=-4A *Roson

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

CEP6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-19A,RDS(ON)=86mΩ@VGS=-10V. RDS(ON)=125mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-4.3A,RDS(ON)=86mΩ@VGS=-10V. RDS(ON)=125mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-4.3A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-223package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET6601A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-4.4A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-223package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEU6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-16A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CEU6601

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

CEU6601A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-16A,RDS(ON)=86mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=125mW@VGS=-4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEZC6601A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-13.5A,RDS(ON)=86mW@VGS=-10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. RDS(ON)=125mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

供应商型号品牌批号封装库存备注价格
CET/華瑞
23+
SO-8
360000
交期准时服务周到
询价
CET/華瑞
23+
SOP-8
50000
全新原装正品现货,支持订货
询价
CET/華瑞
24+
SOP-8
60000
全新原装现货
询价
CEM
23+
SOP-8
8560
受权代理!全新原装现货特价热卖!
询价
SR
23+
SO8
5000
原装正品,假一罚十
询价
CET
24+
95000
询价
CET
1742+
SOP-8
98215
只要网上有绝对有货!只做原装正品!
询价
CETSEMI
19+
SOP-8
67741
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
华瑞/CET
22+
SOP8L
23590
原装正品现货
询价
CETSEMI
20+
SOP-8
63258
原装优势主营型号-可开原型号增税票
询价
更多CEM6601A供应商 更新时间2025-5-19 10:36:00