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CEP6601

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-60V,-19A,RDS(ON)=86mΩ@VGS=-10V. RDS(ON)=125mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET

6601

ComfortProbewithRemovable4mmBananaPlugAdapter

POMONA

Pomona Electronics

POMONA

ADRF6601

750MHzto1160MHzRxMixerwithIntegratedFractional-NPLLandVCO

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

ADRF6601

1200MHzto3600MHzRxMixerwithIntegratedFractional-NPLLandVCO

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

ADRF6601-EVALZ

750MHzto1160MHzRxMixerwithIntegratedFractional-NPLLandVCO

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

AN-6601

LowNoiseJFETAmplifiers

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

AO6601

30VComplementaryMOSFET

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

AO6601

ComplementaryTrenchMOSFET

■Features N-Channel: ●VDS(V)=30V ●ID=3.4A(VGS=10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

AO6601

N-andP-ChannelV(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

AO6601

NPChannelMOSFET

Features N-Ch: *VDS(V)=30V *ID=3.4A(VGS=10V) *RDS(ON)60m(VGS=10V) *RDS(ON)70m(VGS=4.5V) *RDS(ON)90m(VGS=2.5V) P-Ch: *VDS(V)=-30V *ID=-2.3A(VGS=-10V) *RDS(ON)115m(VGS=-10V) *RDS(ON)150m(VGS=-4.5V) *RDS(ON)200m(VGS=-2.5V)

UMWUMW

友台友台半导体

UMW

AO6601

ComplementaryEnhancementModeFieldEffectTransistor

GeneralDescription TheAO6601usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsformahigh-speedpowerinverter,suitableforamultitudeofapplications.StandardProductAO6601isPb-free(meetsROHS&Sony259specifications).AO6

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

AO6601-HF

ComplementaryTrenchMOSFET

■Features N-Channel: ●VDS(V)=30V ●ID=3.4A(VGS=10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

AO6601L

ComplementaryEnhancementModeFieldEffectTransistor

GeneralDescription TheAO6601usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsformahigh-speedpowerinverter,suitableforamultitudeofapplications.StandardProductAO6601isPb-free(meetsROHS&Sony259specifications).AO6

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

AWU6601

HELP3TMBand1/WCDMA/TD-SCDMA3.4V/28.25dBmLinearPAModule

ANADIGICS

ANADIGICS

ANADIGICS

CEB6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-19A,RDS(ON)=86mΩ@VGS=-10V. RDS(ON)=125mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET

CEB6601

P-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

CED6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-16A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET

CED6601A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-16A,RDS(ON)=86mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=125mW@VGS=-4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS

CEM6601

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-4.3A,RDS(ON)=86mΩ@VGS=-10V. RDS(ON)=125mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET

CEM6601

P-Channel60V(D-S)MOSFET

FEATURES •TrenchFET®powerMOSFET •100RgandUIStested

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

详细参数

  • 型号:

    CEP6601

  • 制造商:

    CET

  • 制造商全称:

    Chino-Excel Technology

  • 功能描述:

    P-Channel Enhancement Mode Field Effect Transistor

供应商型号品牌批号封装库存备注价格
SR
23+
TO-220
5000
原装正品,假一罚十
询价
CET
23+
TO-220
8650
受权代理!全新原装现货特价热卖!
询价
23+
N/A
90350
正品授权货源可靠
询价
CET/華瑞
23+
TO-220
50000
全新原装正品现货,支持订货
询价
CET/華瑞
2022+
TO-220
2000
原厂代理 终端免费提供样品
询价
CET
21+
TO-220
10005
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
CET
2201+
TO-220
13704
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
CET/華瑞
23+
NA/
96
优势代理渠道,原装正品,可全系列订货开增值税票
询价
CET/華瑞
2022+
TO-220
30000
进口原装现货供应,原装 假一罚十
询价
CET/華瑞
20+
TO-220
300000
现货很近!原厂很远!只做原装
询价
更多CEP6601供应商 更新时间2024-4-28 18:29:00