Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 6A, RDS(ON) = 27mW @VGS = 4.5V. RDS(ON) = 40mW @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：603.12 Kbytes 页数：4 Pages

CET-MOS

华瑞

丝印：9926；Package：SOP-8；Dual N-Channel Enhancement Mode Field Effect Transistor

Features VDS (V) = 20V ID = 7A RDS(ON)

文件：1.00679 Mbytes 页数：5 Pages

UMW

友台半导体

丝印：9926；Package：SOP-8；Dual N-Channel Enhancement Mode Field Effect Transistor

Features VDS (V) = 20V ID = 7A RDS(ON)

文件：350.97 Kbytes 页数：5 Pages

EVVOSEMI

翊欧

Dual N-Channel Enhancement Mode Field Effect Transistor

文件：140.59 Kbytes 页数：4 Pages

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

文件：414.96 Kbytes 页数：4 Pages

CET

华瑞

N Channel MOSFET

CET

华瑞