Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V , 6A , RDS(ON)=20mΩ @VGS=4.5V. RDS(ON)=30mΩ @VGS=2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface Mount Package.

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CET

华瑞

双N沟道增强型场效应晶体管

文件：63.668 Kbytes 页数：5 Pages

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PDF上传者：深圳市金亿隆电子科技有限公司

Dual N-Channel Enhancement Mode Field Effect Transistor

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华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 20 Volts CURRENT 6 Ampere FEATURE * Small flat package. (SO-8 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：199.48 Kbytes 页数：2 Pages

CHENMKO

力勤

82 Series Multipurpose ABS Enclosure

Product ove r v i ew Multi-purpose ABS cases, designed for a broad range of applications. • Universal plastic enclosure with screw fastening • Available in 26 sizes in two colours; white and black • Suitable for measuring instruments, testing, devices, wireless communications devices, med

文件：431.02 Kbytes 页数：2 Pages

CAMDENBOSS

82 Series Multipurpose ABS Enclosure

Product ove r v i ew Multi-purpose ABS cases, designed for a broad range of applications. • Universal plastic enclosure with screw fastening • Available in 26 sizes in two colours; white and black • Suitable for measuring instruments, testing, devices, wireless communications devices, med

文件：431.02 Kbytes 页数：2 Pages

CAMDENBOSS