CEM8206

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■20V,6A,RDS(ON)=20mΩ@VGS=4.5V. RDS(ON)=30mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfaceMountPackage.

CEM8206

双N沟道增强型场效应晶体管

CHM8206JPT

DualN-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE20VoltsCURRENT6Ampere FEATURE *Smallflatpackage.(SO-8) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CUE8206BK

82SeriesMultipurposeABSEnclosure

Productoverview Multi-purposeABScases,designedforabroad rangeofapplications. •Universalplasticenclosurewithscrew fastening •Availablein26sizesintwocolours;whiteand black •Suitableformeasuringinstruments,testing, devices,wirelesscommunicationsdevices, med

CUE8206WH

82SeriesMultipurposeABSEnclosure

Productoverview Multi-purposeABScases,designedforabroad rangeofapplications. •Universalplasticenclosurewithscrew fastening •Availablein26sizesintwocolours;whiteand black •Suitableformeasuringinstruments,testing, devices,wirelesscommunicationsdevices, med

CZ8206

RFAMPLIFIER

EP8206-HL

14PinDIP5TapLowProfileTTLCompatibleActiveDelayLines

EP8206-HL(-RC)

14PinDIP5TapLowProfileTTLCompatibleActiveDelayLines

EP8206-HL-RC

14PinDIP5TapLowProfileTTLCompatibleActiveDelayLines

FWA8206

6xPCI-EGigabitLANports,upto8ports