P-Channel Enhancement Mode Field Effect Transistor

FEATURES ● -20V, -2.5A, RDS(ON) = 250mΩ @VGS = -10V. RDS(ON) = 400mΩ @VGS = -4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

文件：497.11 Kbytes 页数：5 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

CET

华瑞

COM Express Type 10 Mini Module with Intel® Atom® E3800 Family

Features ● Intel® Atom® processor (Bay Trail) ● Onboard DDR3L up to 4GB ● Max. up to 4 lanes of PCIe ● 2 SATA-300 ● 8 USB 2.0 and 1 USB 3.0

文件：349.72 Kbytes 页数：2 Pages

AXIOMTEK

艾讯科技

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ● -30V, -3.4A, RDS(ON) = 130mΩ @VGS = -10V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

文件：491.11 Kbytes 页数：5 Pages

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华瑞

P-Channel Enhancement Mode Field Effect Transistor

CET

华瑞