P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -3.7A, RDS(ON) = 108mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：109.09 Kbytes 页数：4 Pages

CET

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -3.7A, RDS(ON) = 125mW @VGS = -10V. RDS(ON) = 165mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：537.98 Kbytes 页数：4 Pages

CET-MOS

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P-Channel Enhancement Mode Field Effect Transistor

文件：389.74 Kbytes 页数：4 Pages

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P Channel MOSFET

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